TC4423A/TC4424A/TC4425A
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
Supply Voltage ................................................................+20V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Input Voltage, IN A or IN B .......... (V DD + 0.3V) to (GND – 5V)
Package Power Dissipation (T A =50°C)
8L PDIP .......................................................................1.2W
8L SOIC.................................................................... 0.61W
16L SOIC.....................................................................1.1W
8L DFN .................................................................... Note 3
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
1.5
1.3
0.8
V
V
Input Current
Input Voltage
I IN
V IN
–1
-5
1
V DD +0.3
μA
V
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
V OH
V OL
R OH
R OL
I PK
I REV
V DD – 0.025
2.2
2.8
4.5
>1.5
0.025
3.0
3.5
V
V
Ω
Ω
A
A
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
10V ≤ V DD ≤ 18V (Note 2)
Duty cycle ≤ 2%, t ≤ 300 μsec.
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
t R
t F
t D1
t D2
12
12
40
41
21
21
48
48
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
C L = 1800 pF
Figure 4-1, Figure 4-2,
C L = 1800 pF
Figure 4-1, Figure 4-2,
C L = 1800 pF
Figure 4-1, Figure 4-2,
C L = 1800 pF
Power Supply
Supply Voltage
V DD
4.5
18
V
Power Supply Current
I S
I S
1.0
0.15
2.0
0.25
mA
mA
V IN = 3V (Both inputs)
V IN = 0V (Both inputs)
Note 1:
2:
3:
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
? 2007 Microchip Technology Inc.
DS21998B-page 3
相关PDF资料
TC4424MJA IC MOSFET DVR 3A DUAL HS 8-CDIP
TC4425VMF IC MOSFET DVR 3A DUAL HS 8DFN
TC4427MJA IC MOSFET DVR 1.5A DUAL HS 8CDIP
TC4428VUA713 IC MOSFET DVR 1.5A DUAL HS 8MSOP
TC4429VPA IC MOSFET DRIVER 6A HS 8DIP
TC4432VOA713 IC MOSFET DRIVER 30V 1.5A 8SOIC
TC4452VPA IC MOSFET DVR 12A HS 8DIP
TC4467COE IC MOSFET DVR QUAD NAND 16SOIC
相关代理商/技术参数
TC4423AVOA 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4423AVOA 制造商:Microchip Technology Inc 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE
TC4423AVOA713 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4423AVOE 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4423AVOE713 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4423AVPA 功能描述:功率驱动器IC 3A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
TC4423CG 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3A Dual High-Speed Power MOSFET Drivers
TC4423CMF 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3A Dual High-Speed Power MOSFET Drivers